PART |
Description |
Maker |
M12L64322A M12L64322A-6T M12L64322A-7T |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc. ETC
|
A43L1632V-6 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMIC Technology Corporation
|
IC42S16101 IC42S16101-5BG IC42S16101-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
ADS4616A4A ADS4616A4A-5 ADS4616A4A-6 ADS4616A4A-7 |
Synchronous DRAM(512K X 16 Bit X 2 Banks) 同步DRAM(为512k × 16位2组)
|
ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
A43E06321G-95UF A43E06321G-75UF A43E06321G-75F A43 |
General Purpose 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 12k × 32位2银行低功耗同步DRAM
|
AMIC Technology Corporation AMIC Technology, Corp.
|
HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|